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SQJ970EP
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
0.10
0.08
0.06
0.04
0.02
0.00
V GS = 4.5 V
V GS = 10 V
52
50
48
46
44
42
I D = 1 mA
0
8
16
24
32
40
- 50
- 25
0
25
50
75
100
125
150
175
100
10
1
0.1
0.01
0.001
I D - Drain Current (A)
On-Resistance vs. Drain Current
T J = 150 °C
T J = 25 °C
T J - Temperature (°C)
Drain-Source Breakdown vs. Junction Temperature
0.15
0.12
0.09
0.06
T J = 125 °C
0.03
T J = 25 °C
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2 3 4 5 6 7 8
9
10
1.8
V SD - Source-to-Drain V oltage ( V )
Source Drain Diode Forward Voltage
0.6
V GS - Gate-to-Source V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
1.6
1.4
1.2
1.0
0.8
0.6
I D = 10.2 A
V GS = 10 V
0.3
0.0
- 0.3
- 0.6
- 0.9
- 1.2
I D = 250 μA
I D = 5 mA
- 50
- 25
0
25
50
75
100
125
150
175
- 50
- 25
0
25
50
75
100
125
150
175
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
T J - Temperature (°C)
Threshold Voltage
S11-2419-Rev. C, 19-Dec-11
4
Document Number: 65282
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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